Auflistung nach Schlagwort "Semiconductor doping"

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  • Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects 
    Döhrmann, S.; Hägele, D.; Rudolph, J.; Bichler, M.; Schuh, D.; Oestreich, Michael (College Park, MD : American Physical Society, 2004)
    The anisotropic spin dephasing in (110) quantum wells (QW) from 6 K up to room temperature was investigated. It was found that intersubband scattering constitutes a new spin dephasing mechanism that is necessary to explain ...
  • Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers 
    Madumelu, Chukwuka; Cai, Yalun; Hollemann, Christina; Peibst, Robby; Hoex, Bram; Hallam, Brett J.; Soeriyadi, Anastasia H. (Amsterdam [u.a.] : NH, Elsevier, 2023)
    Polysilicon (poly-Si)-on-oxide passivating contact structures (POLO/TOPCon) enable high-efficiency solar cells as they simultaneously provide a very high level of surface passivation and a high conductance for either ...
  • Disorder and superconductivity in doped semiconductor nanotubes 
    Shirakawa, T.; Nishimoto, S.; Ohta, Y.; Fukuyama, H. (Bristol : IOP Publishing Ltd., 2009)
    Finite-size systems of the one-dimensional attractive Hubbard model with random potential are studied as an effective model for doped semiconductor nanotubes. We calculate the binding energy of Cooper pairs and pair ...
  • Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well 
    Kamata, N.; Klausing, H.; Fedler, F.; Mistele, D.; Aderhold, J.; Semchinova, O.K.; Graul, J.; Someya, T.; Arakawa, Y. (Cambridge : Cambridge University Press, 2004)
    In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by ...
  • Layer transfer from chemically etched 150 mm porous si substrates 
    Terheiden, Barbara; Hensen, Jan; Wolf, Andreas; Horbelt, Renate; Plagwitz, Heiko; Brendel, Rolf (Basel : MDPI AG, 2010)
    We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface ...
  • Multi-terminal magnetotransport measurements over a tunable graphene p-n junction created by AFM-nanomachining 
    Schmidt, H.; Smirnov, D.; Rode, J.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2013)
    An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect ...
  • Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions 
    Reiter, Sina; Koper, Nico; Reineke-Koch, Rolf; Larionova, Yevgeniya; Turcu, Mircea; Krügener, Jan; Tetzlaff, Dominic; Wietler, Tobias; Höhne, Uwe; Kähler, Jan-Dirk; Brendel, Rolf; Peibst, Robby (London : Elsevier Ltd., 2016)
    We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle ...
  • Passive mode locking by carbon nanotubes in a femtosecond laser written waveguide laser 
    Della Valle, Giuseppe; Osellame, Roberto; Galzerano, Gianluca; Chiodo, Nicola; Cerullo, Giulio; Laporta, Paolo; Svelto, Orazio; Morgner, Uwe; Rozhin, A.G.; Scardaci, V.; Ferrari, A.C. (American Institute of Physics Inc., 2006)
    The authors report on the first demonstration of mode locking in an active waveguide laser manufactured by femtosecond laser writing. The active waveguide is fabricated in an Er-Yb-doped phosphate glass, and the mode locker ...
  • Role of doping agent degree of sulfonation and casting solvent on the electrical conductivity and morphology of pedot:Spaes thin films 
    Tomasino, Daniela Valeria; Wolf, Mario; Farina, Hermes; Chiarello, Gianluca; Feldhoff, Armin; Ortenzi, Marco Aldo; Sabatini, Valentina (Basel : MDPI AG, 2021)
    Poly(3,4-ethylenedioxythiophene) (PEDOT) plays a key role in the field of electrically conducting materials, despite its poor solubility and processability. Various molecules and polymers carrying sulfonic groups can be ...